IN Brief:
- Toshiba has expanded its N-channel MOSFET portfolio for 24V and 48V industrial power rails.
- The range includes three 100V devices for 48V lines and six 60V devices for 24V systems.
- SOT-23F, TSOP6F, and UDFN6B packages give designers thermal and layout flexibility.
Toshiba Electronic Devices & Storage has expanded its N-channel power MOSFET portfolio with nine devices for industrial equipment operating on 24V and 48V power rails.
The new devices are divided across 60V and 100V ratings. Three 100V parts are intended for 48V power lines, where voltage spikes, inrush current, and transient behaviour can push operating conditions well above the nominal rail. Six 60V parts target conventional 24V systems, supporting compact switching functions across industrial control and power-management circuitry.
The 100V family includes SSM3K387R, SSM6K387R, and SSM6K387NU devices, each with an on-resistance of 198mΩ. The 24V-targeted range includes SSM3K388R, SSM6K388R, and SSM6K388NU devices with 99mΩ on-resistance, alongside SSM3K389R, SSM6K389R, and SSM6K389NU devices with 200mΩ on-resistance.
Toshiba is offering the parts in three compact package formats. The SOT-23F package measures 2.9mm x 2.4mm and supports 1W power dissipation. The TSOP6F package measures 2.9mm x 2.8mm and raises power dissipation capability to 1.5W. The UDFN6B package measures 2.0mm x 2.0mm and supports up to 1.25W, making it suitable for dense layouts where board area is tightly constrained.
Potential applications include programmable logic controllers, servo drives, industrial inverters, servers, LED lighting systems, and compact robotic products. The devices are intended to reduce conduction losses while supporting smaller power circuits in equipment where enclosure size, cooling, and board layout are already under pressure.
Industrial power distribution is moving steadily beyond the old assumption that 24V control rails dominate every low-voltage design. Higher 48V rails are becoming more attractive because they can reduce current for a given power level, easing cable, connector, and copper-loss constraints. The shift also increases demands on voltage headroom, transient tolerance, and thermal behaviour, making device selection more dependent on real rail behaviour than nominal operating values.
The same movement is visible in automotive-adjacent electronics, where ROHM’s 48V MOSFET work has already pointed to higher-voltage low-voltage distribution as a practical route to improved efficiency. Toshiba’s latest devices address a more industrial set of applications, but the electrical problem is familiar: smaller switching parts must handle higher power density without forcing wider layout margins or larger thermal compromises.
Package choice is increasingly part of that trade-off. A MOSFET that meets voltage and resistance requirements on paper can still become unsuitable if its package cannot support the required heat flow, assembly process, inspection regime, or board-space constraint. Offering the devices across SOT-23F, TSOP6F, and UDFN6B formats gives designers a way to adjust the mechanical and thermal fit without changing the entire electrical approach.
As industrial controllers, drives, servers, lighting systems, and robotic products become more compact, the power stage is carrying a greater share of the design burden. Toshiba’s expanded MOSFET range adds more device granularity around 24V and 48V systems, where the difference between a workable design and a fragile one often sits in the package, thermal path, and transient margin.
