IN Brief:
- Cambridge GaN Devices has developed a 650V ICeGaN device for automotive inverters.
- The 9mΩ prototype is sampling for EV powertrain design work.
- GaN inverter adoption depends on switching performance, parallel operation, thermal control, and automotive qualification.
Cambridge GaN Devices has developed a 650V ICeGaN device for automotive inverter applications, with a 9mΩ prototype now sampling to interested parties.
The device is designed to improve inverter efficiency in electric-vehicle powertrains by reducing conduction losses and supporting higher-frequency switching. Higher switching frequency can allow passive components and propulsion-system hardware to be reduced in size and weight, contributing to lighter inverter designs.
ICeGaN also simplifies the interface between the GaN IC and gate-driver ICs in the inverter. An auxiliary transistor in the interface filters parasitic noise from gate-driver loops, giving the device built-in noise immunity. Integrated temperature sensing supports system control and diagnostics, both of which become more important as inverter power density increases.
Parallel operation is a key part of the design. Automotive inverter stages often require multiple devices to operate together under fast-switching and high-current conditions, and balancing those devices without excessive external circuitry can be difficult. CGD’s interface is designed to allow larger die and parallel operation without requiring tightly selected devices or additional balancing components.
CGD has already demonstrated a multilevel GaN 800Vdc inverter capable of powering electric motors above 100kW peak and 75kW continuous power. The new 650V device gives the company a component-level route into automotive inverter discussions, rather than relying only on system demonstrators.
EV inverter design is under pressure from efficiency, packaging, cost, and qualification requirements. Silicon IGBTs and SiC MOSFETs remain established in traction applications, while GaN has to prove that its switching-speed advantages can be turned into durable system gains. Gate drive, layout, protection, electromagnetic compatibility, thermal behaviour, and lifetime stress all shape whether the device can move from prototype into vehicle platforms.
High-frequency GaN motor control is already being explored in adjacent industrial systems. QPT’s 1MHz GaN drive demonstrations point to the same broader shift: the value of GaN lies in the complete drive architecture, not only in the transistor switching faster.
Manufacturing scale will also affect adoption. CGD is working with GlobalFoundries to support production of ICeGaN and related devices, strengthening the fabless company’s supply chain for power applications. For automotive programmes, device performance must be matched by reliable manufacturing, qualification evidence, and long-term availability.
The 650V ICeGaN device positions the UK company closer to production inverter design work. If the interface can reduce balancing and drive complexity while retaining GaN’s efficiency advantages, it could remove one of the practical barriers to broader EV powertrain adoption.
