Microchip hardens SiC power modules for harsh high-voltage duty

Microchip hardens SiC power modules for harsh high-voltage duty

Microchip targets harsher power stages with ruggedised silicon carbide packaging. Its new BZPACK mSiC modules combine HV-H3TRB endurance, broad topology options, and a baseplate-less assembly approach for industrial and renewable energy power-conversion designs.


IN Brief:

  • Microchip has launched BZPACK mSiC power modules for industrial and renewable power-conversion systems operating in harsher environments.
  • The modules combine HV-H3TRB durability, CTI 600V packaging, and multiple topology options with a baseplate-less assembly approach.
  • The range is designed to reduce packaging and manufacturing friction as SiC moves deeper into long-life high-power applications.

Microchip Technology has launched its BZPACK mSiC power modules, targeting industrial and renewable energy designs that have to hold electrical performance under heat, humidity, and sustained high-voltage stress. The range is built around the company’s silicon carbide device platform and arrives with a message aimed as much at reliability engineering as at raw switching performance.

The headline specification is HV-H3TRB robustness beyond the 1,000-hour benchmark, a detail that matters in converters expected to survive long operating lives in difficult environmental conditions. Microchip is also pairing that with a CTI 600V case, stable Rds(on) behaviour across temperature, and a choice of aluminium oxide or aluminium nitride substrates, which gives developers some flexibility in balancing insulation, thermal performance, and cost.

Topology coverage is broad, spanning half-bridge, full-bridge, three-phase, and PIM/CIB configurations. On the packaging side, Microchip has gone with a compact baseplate-less construction, Press-Fit solderless terminals, optional pre-applied thermal interface material, and pin-compatible options intended to simplify assembly and multi-sourcing. That combination points to a familiar pressure in power electronics right now: SiC is no longer a niche efficiency upgrade, it is increasingly a manufacturing decision as well.

The launch also ties directly into Microchip’s MB and MC mSiC MOSFET families. The devices support common gate-source voltages of 15 V and above, AEC-Q101-qualified options are available, and the MC family integrates a gate resistor to improve switching control and stability in multi-die module layouts. Production availability has already started, with further details on the Microchip silicon carbide portfolio page.


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