IN Brief:
- Mouser Electronics has signed a global distribution agreement with Efficient Power Conversion.
- The agreement expands availability of EPC’s eGaN FETs and ICs for power conversion, LiDAR, motor control, robotics, drones, and e-mobility.
- GaN devices are moving deeper into high-density industrial, robotic, and data-centre power systems.
Mouser Electronics has entered a global distribution agreement with Efficient Power Conversion, expanding access to EPC’s gallium nitride power devices for high-efficiency electronics design.
The agreement covers EPC’s portfolio of eGaN FETs and ICs, which target applications including DC/DC converters, LiDAR and remote sensing, motor control, e-mobility, robotics, drones, and low-cost satellites. Mouser will distribute EPC’s complete eGaN device portfolio through its global channel.
Products listed through Mouser include the EPC2302, a 100V eGaN power transistor with maximum RDS(on) of 1.8mΩ in a 3mm x 5mm QFN package with an exposed top for thermal management. The device is designed for high-frequency 40V to 60V DC/DC converters and 48V brushless DC motor-drive applications.
The EPC2302 includes side-wettable flanks for optical inspection, low capacitance, zero reverse recovery, and a low-inductance footprint. Those characteristics align with GaN’s core strengths in power design, where fast switching and lower parasitics can reduce losses, shrink passives, and improve transient behaviour in compact conversion and drive stages.
Distribution access shapes how quickly engineering teams can evaluate and adopt new switching technologies. GaN devices demand careful layout, gate-drive design, thermal planning, EMI control, and validation. Availability through a major distributor reduces friction at the early design stage, particularly for teams moving from silicon MOSFETs into higher-frequency architectures.
EPC’s portfolio occupies a growing area of power electronics where voltage levels are moderate but switching speed, efficiency, and compactness are critical. Robotics joints, drones, LiDAR transmitters, 48V motor drives, point-of-load converters, and distributed power modules all benefit from lower switching losses and reduced charge storage. In many of those designs, GaN is used to change the topology, frequency, and mechanical layout rather than simply replace a silicon device.
Production and test activity is following the same curve. Cohu’s GaN power device test orders for AI data centre power architectures showed how volume adoption depends on test infrastructure as well as device performance. Distribution access addresses the front end of the same process, where part availability, evaluation boards, documentation, and procurement confidence influence whether a design makes it past feasibility work.
The agreement also fits the direction of industrial and robotic power systems. Electric actuation, dense battery-powered platforms, autonomous machines, and AI-driven hardware all require higher power density without excessive thermal penalty. Silicon remains entrenched across these markets, but GaN is gaining ground where faster switching can reduce magnetics size, improve control response, and increase efficiency in constrained enclosures.
That performance comes with a narrower margin for poor implementation. Layout inductance, gate-loop behaviour, thermal paths, dead time, measurement technique, and EMI control can determine whether a GaN design delivers its expected gains. Broader availability through Mouser gives design teams a more straightforward route to comparing parts, sourcing samples, and moving from evaluation hardware into prototype systems.
The Mouser-EPC agreement gives GaN another path into mainstream engineering workflows. As industrial, robotic, and data-centre systems pursue denser power conversion, established distribution will play a practical role in moving the technology from specialist designs into wider production use.
