Infineon SiC supports megawatt charging converters

Infineon Technologies will supply 1200V CoolSiC MOSFETs and matching dual-channel EiceDRIVER 2EDB9259Y gate drivers to ADVANTICS for a new line of liquid-cooled power converters.

The converters are intended for high-power applications including megawatt charging systems for heavy-duty vehicles and vessels, energy storage systems, and DC microgrids for data centres. ADVANTICS’ liquid-cooled platform is based on modular 100kW building blocks, allowing systems to scale into the megawatt range.

The platform supports bidirectional operation, a voltage range up to 1500V, and peak efficiency of up to 98.5%. Its architecture is designed to integrate with grids, batteries, and high-power charging infrastructure, where converter density, efficiency, and reliability have a direct effect on installation footprint and operating cost.

Megawatt charging is becoming a core requirement for electrifying heavy trucking, mining, marine, and other high-utilisation transport applications. Conventional charging infrastructure is often too slow for large battery systems and short downtime windows. Higher-power systems can reduce charging time substantially, but they also intensify the power conversion, thermal, protection, and grid-connection challenges around the charging site.

Silicon carbide is well suited to these conditions because it enables high-voltage, high-efficiency switching with lower losses than comparable silicon devices in many power conversion applications. Lower switching and conduction losses reduce thermal load, while higher switching frequencies can help shrink passives and improve converter power density. Those advantages only become useful when gate drive, layout, cooling, protection, and control are engineered as a single system.

Infineon’s pairing of CoolSiC MOSFETs with dedicated gate drivers addresses part of that integration requirement. Gate-drive behaviour is critical in SiC systems because switching speed, overshoot, EMI, short-circuit response, and protection coordination all influence reliability. A high-performance MOSFET without disciplined gate control can create converter-level problems rather than deliver clean efficiency gains.

Wide-bandgap power design is also moving deeper into packaging and thermal engineering, as shown by the 450A GaN power module developed by Dynex. SiC occupies a different voltage and power range, but the industrial challenge is similar: device performance has to be translated into qualified, cooled, serviceable converter hardware.

Data centres add another demand driver. As AI infrastructure grows, power delivery and conversion efficiency are becoming facility-level constraints. DC microgrids, storage integration, and high-efficiency conversion can reduce losses and improve flexibility, but they require robust power electronics capable of continuous operation under tight thermal and availability requirements.

Infineon and ADVANTICS are moving SiC adoption further into platform-level converter design. Heavy-duty electrification, marine charging, energy storage, and data-centre power systems will depend on modular architectures that can scale power while controlling heat, losses, protection behaviour, and maintenance complexity.