IN Brief:
- Mouser has signed a global distribution agreement with Efficient Power Conversion.
- EPC’s eGaN FETs and ICs span 15 V to 350 V.
- The range targets DC-DC converters, lidar, motor control, robotics, drones, and e-mobility designs.
Efficient Power Conversion has entered a global distribution agreement with Mouser Electronics, expanding access to EPC’s enhancement-mode gallium nitride power devices for high-efficiency power conversion and motor-control applications.
The agreement covers EPC eGaN FETs and integrated circuits spanning 15 V to 350 V. Mouser is making the devices available for DC-DC converters, lidar, motor control, e-mobility, robotics, drones, and compact systems where switching efficiency, heat dissipation, and power density shape the design envelope.
Among the devices now available is the EPC2302, a 100 V eGaN power transistor with a maximum RDS(on) of 1.8 mΩ in a 3 mm x 5 mm low-inductance QFN package. The package includes an exposed top for thermal management and side-wettable flanks to support optical inspection after reflow. It is designed for high-frequency DC-DC applications from 40 V to 60 V and for 48 V BLDC motor drives.
Mouser’s EPC line card also includes the EPC23102 100 V 35 A ePower Stage IC, the EPC91200 three-phase motor-drive inverter evaluation board, and the EPC2305 enhancement-mode GaN power transistor. The products sit in the low-voltage and mid-voltage range where GaN is increasingly used to reduce switching losses, shrink magnetics, improve thermal behaviour, and raise power density.
EPC’s technology has been moving further into mainstream power design. Renesas has licensed EPC eGaN for power conversion, adding second-sourcing and low-voltage GaN coverage to its broader power roadmap, while Cohu’s GaN power device test orders show the manufacturing and validation side of the same transition.
Many compact electronic systems now reach thermal and density limits before they exhaust the theoretical capability of silicon MOSFETs. AI infrastructure, robotics, drones, lidar systems, and small motor drives place heavy demands on conversion efficiency, switching frequency, board area, and heat spreading.
GaN devices can switch faster than silicon while avoiding reverse-recovery losses associated with conventional MOSFET body diodes. Higher-frequency operation can reduce the size of passive components and improve transient response, although layout discipline, gate-drive control, thermal design, and test coverage remain critical.
The 48 V ecosystem is a strong fit for EPC’s low-voltage and mid-voltage range. Data-centre power delivery, robotics, drones, e-bikes, light electric vehicles, and industrial motor systems are all using higher intermediate voltages to reduce current and cabling losses, followed by local high-efficiency conversion. Low-inductance GaN packages and integrated power stages align with those distributed power architectures.
Distribution availability also affects adoption. Engineers evaluating GaN need access to production devices, evaluation boards, documentation, models, and supporting inventory during design-in. Mouser’s agreement with EPC broadens that route at a point when GaN is increasingly treated as a standard option for compact power conversion rather than a specialist technology reserved for niche designs.
