Infineon extends automotive MOSFET performance while retaining established package dimensions. The new 40V, 80V and 100V devices combine lower on-resistance with the established 10×12mm TOLL footprint.
Infineon has introduced MOSFET technology simplifying automotive electronic power distribution. LinearFET addresses parallel current sharing, inrush behaviour and short-circuit robustness in solid-state distribution systems.
Infineon has developed hardware for evaluating higher-voltage AI rack distribution. The 12kW reference board combines hot-swap protection, modular conversion stages and telemetry for evaluation of ±400V and 800V architectures.
Infineon’s new server power design targets higher-density enterprise computing equipment. Its modular 5.6kW supply specifies 170W/in³ power density, 54V output and a peak efficiency above 98%.
Infineon is embedding silicon carbide devices directly within inverter boards. Its ENDOPACK concept targets lower parasitics and a different manufacturing route for automotive power stages.
Infineon and Enphase are testing new 900V bidirectional GaN switches. Initial tests have been completed, and the devices are entering solid-state transformer development builds ahead of production qualification.
Vertical Semiconductor signs conditional federal funding letter for semiconductor research. The proposed $73 million award would support vertical GaN transistors and development of a 2.5MW AI computing rack, with performance improvements remaining targets.
STMicroelectronics introduces integrated MasterGaN7 devices for compact power conversion applications. Each device combines a 650V half-bridge and gate driver, supports switching up to 2MHz, and is already in volume production.
TDK has introduced two thermistor assemblies for high voltage equipment. The M704 supports up to 4,000 V AC, while the M705 offers metal-tag mounting and a higher maximum operating temperature.
TDK has introduced compact Y1 capacitors for interference suppression applications. The B3201 series supports 500 V AC operation and temperatures up to 125°C, subject to voltage derating and a defined elevated-temperature duration limit.