Magnachip has expanded its E6 super-junction MOSFET family with fifteen. The 500 V and 600 V devices target compact switch mode power supplies while balancing conduction loss, switching behaviour and thermal margin.
Microchip and Navitas built direct rack conversion from 800 V. The 20 kW reference platform converts the rack bus to 6 V while targeting 96% efficiency at around 1 MHz.
Vishay has launched 650V SOT-227 modules for industrial power conversion. Four devices combine superjunction MOSFETs with established module mechanics and immediate production availability.
TDK has released DC-link capacitors rated for higher operating temperatures. The 800V-to-1200V series runs continuously at case temperatures reaching 135°C.
EPC has demonstrated GaN conversion from 800V to processor cores. Its 6kW platform steps to 6V before a 5MHz stage delivers 0.9V at 11A.
Toshiba has halved threshold drift in trench-gate silicon carbide MOSFETs. Revised gate-interface processing improves long-term stability while retaining low on-resistance.
OmniOn Power expands Osprey converters for dense AI infrastructure systems. Second-generation QODN modules deliver up to 2.6kW from a regulated 40–60V input while retaining the modified DOSA quarter-brick footprint.
QPT has unveiled an 800V converter architecture for AI racks. The qMicroModule IBC uses stacked GaN stages and multi-MHz switching to increase converter power density.
Renesas has launched compact 650V GaN for 800V power systems. The dual-side-cooled 8×8mm PQFN targets high-density AI data centre conversion, with 20mΩ on-resistance and a 57% smaller footprint than Renesas’ TOLT package.