ROHM’s 750V SiC MOSFET has been adopted in a battery backup unit for AI server power supplies. The device supports high-voltage DC architectures as rack-level power systems move toward higher voltage and density.
JEDEC has released JEP203 and JEP204 for silicon carbide power semiconductors. The documents cover short-circuit evaluation and stress procedures, supporting more consistent qualification of SiC devices in EVs, industrial drives, renewable systems, and high-power electronics.
Bull and Foxconn will manufacture AI and cloud infrastructure across France and the Czech Republic. The partnership targets AI factories, neo-cloud providers, enterprises, and research institutions, with an initial investment expected to exceed €120m.
Tessalia will produce advanced SiP components in France. The Foxconn, Radiall, and Thales joint venture targets aerospace, telecoms, automotive, and medical applications, with production planned from 2029 and annual output above 50 million components by 2033.