Category: Products
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BorgWarner’s BMS contract expands to more EV platforms from 2029. A modular BMU–CMU architecture targets 800V packs, DC fast-charge communication, and ASIL D-oriented diagnostics.
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Teledyne FLIR OEM has launched a new long-range thermal ISR camera. The Neutrino SX8 ISR 50-1000 extends detection ranges for border, perimeter, and counter-UAS applications, with a factory-integrated continuous zoom lens and AI-ready architecture.
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Infineon is shipping isolated gate drivers aimed at SiC inverters. The 1ED301xMC12I family uses an opto-emulator input to replace optocouplers without a PCB redesign, while tightening timing, noise immunity, and switching behaviour.
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Richardson Electronics has added Nxbeam MMICs to its RF portfolio. A global agreement broadens access to GaN and GaAs devices up to 76 GHz for radar, satcom, and test equipment designs.
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Renesas has pushed Wi-Fi 6 into its RA6 combo MCUs. The RA6W1 and RA6W2 integrate Ceva wireless IP to reduce external radios, simplify PCB layouts, and cut BOM cost for IoT designs.
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EnSilica joins the CHERI Alliance to harden custom ASICs today. The mixed-signal supplier says it will use CHERI capability-based hardware techniques to strengthen memory safety for automotive and industrial silicon.
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Rohde & Schwarz has pushed mid-range spectrum analysis to 44GHz. The new FPL1044 spans 10Hz to 44GHz and adds a 40MHz real-time spectrum analysis option across the FPL family, targeting Ka-band and adjacent high-frequency test workloads.
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RIR introduced 1,200V SiC MPS diodes for EV powertrains today. The TO-247-2L devices span 10A to 40A and target high-frequency power conversion in chargers, inverters, and industrial drives where switching loss and thermal headroom dominate design.
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A low-power sensor node runs machine learning without the cloud. A new modular architecture pairs heterogeneous environmental sensing with on-device inference, adaptive LoRaWAN reporting, and solar-assisted energy management to reduce traffic while keeping event detection local.
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Edinburgh team reports a recoverable hexagonal germanium–tin semiconductor class today. The group used extreme pressure and heat to create stable GeSn alloys that could improve light–electricity conversion in optoelectronic components for processors, imaging systems, and data-centre hardware.