Category: Memory
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TrendForce data points to sharper mobile DRAM cost pressure ahead.
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Weebit Nano has moved embedded ReRAM closer to commercial production, with two customer chip designs taped out and one prototype already demonstrating functional silicon operation.
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Silicon wafer shipments rose sharply as AI demand widened globally.
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Rambus has introduced a SOCAMM2 chipset for LPDDR5X-based AI server modules. The launch adds local power regulation, thermal telemetry, and configuration support to the emerging modular server-memory format.
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GUC has demonstrated a 12Gbps HBM4 controller and PHY platform on TSMC 3nm, highlighting the next step in high-bandwidth memory integration for AI and advanced compute designs.
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IDC has sharply lowered its 2026 smartphone forecast as memory constraints worsen. The market is now expected to fall to 1.12 billion units, with higher DRAM and NAND pricing pushing vendors toward reduced configurations, higher ASPs, and tougher product decisions.
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Synopsys has rolled out a complete UFS 5.0, UniPro 3.0, and M-PHY v6.0 IP solution for next-generation storage, combining protocol, link, and physical layers in a single stack as edge-AI and automotive SoCs push storage bandwidth into a system-level constraint.
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Micron has launched its 3610 Gen5 QLC client SSD line. The drive combines PCIe Gen5 throughput, up to 4TB capacity, and stronger performance per watt for thinner AI-ready systems.
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Rambus has launched new HBM4E controller IP for accelerator designs. The block targets AI and HPC devices that need much higher memory bandwidth, with early-access licensing now open.
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Europe’s ferroelectric memory push has reached an important manufacturing test. CEA-Leti and Fraunhofer IPMS have completed the first wafer exchange inside the FAMES pilot line for HZO-based memory stacks.